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| Mfg Part Number: 2N6800 | NSN : 5961-01-248-1923 | NIIN : 012481923 |
| CAGE Code : 07688 | Manufacturer: Joint Electron Device Engineering | Item Name : Transistor |
| FSC : 5961 Semiconductor Devices and Associated Hardware |
Aviation Gamut, owned and operated by ASAP Semiconductor, is an all-inclusive purchasing platform for hard-to-find and in-demand parts 2N6800 and components pertaining to the civil aviation, defense, aerospace, industrial, and electronic markets. An NSN is a 13-digit numeric code that serves to identify 'standardized material items of supply' as they have been recognized by all NATO countries and the United States Department of Defense. As such, we have an inventory of more than two billion new and obsolete parts, among which is an unparalleled selection of NSN parts and much more. This includes items such as Transistor 2N6800 from manufacturer Joint Electron Device Engineering and many more, all of which are available with short lead times and competitive prices. For NSN parts, Aviation Gamut is the ultimate source.
Our website offers a number of parametric search capabilities, one of which allows you to search specifically for 2N6800. This means you can quickly sort through National Stock Numbers such as 5961012481923 and find parts from quality manufacturers like Joint Electron Device Engineering and many others. To begin the purchasing process immediately, submit an RFQ today. Our team of dedicated account managers is standing by and will respond to all inquiries in 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-248-1923 Item Description: Transistor | 5961 | 012481923 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 2n6800 | 1 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-205AF |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 400.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/557 GOVERNMENT SPECIFICATION |
 |
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